3rd International Nanotechnology Conference & Expo
May 7-9, 2018, Rome, Italy
Simulation of Nanoscale AlGaN/GaN High -Electron Mobility Transistors Employing Field-Plate Technology
1Departement de Technology, Faculty des Sciences et de la Technology, University de Djilali Bounaama- Khemismiliana, Algeria
2Laboratoire de Microsystemeet Instrumentation (LMI), Departement de electronic, University Mentouri de Constantine, Algeria
3IEMN-CNRS 8520, University des Sciences et Technology de Lille, France
1Department of Chemistry, Bilkent University, Turkey
2Department of Physics, Bilkent University, Turkey
The excellent microwave power performance demonstrated in AlGaN/GaN HEMTs (high-electron mobility transistors) results from the combination of high current density with high voltage operation[1], which benefits from the high sheet charge density in these hetero-structures (1013 cm-2), the high carrier mobility (1500 cm2/Vs) and saturation velocity (1.5 × 107 cm/s) in the channel and the high breakdown voltage inherent in the GaN material. However, their reliability still limits their applications in todayʼs electronic systems. The newly developed field-plated AlGaN/GaN high electron mobility transistors show improved performance dueto the electricfield reduction in the device channel and surface modification[2]. We report on two dimensional numerical simulations of gate-recessed and field-plated AlGaN/GaN HEMTs where all the important device parameters have been defined, the insulator thickness under the field plate is also an important design parameter to attain higher breakdown voltage, thus an improvement of the performances of HEMT devices.
[1] Y. F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Elect. Dev. Let. 117(2004) 25
[2] K. H. Cho, Y. S. Kim, J. Lim, Y. H. Choi, M. K. Ha, Sol.Stat. Elect. 405(2010) 54.
